High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

We report here first magneto-photoluminescence investigations under high pressure up to 6 GPa on III-VI layered semiconductor InSe. Both diamagnetism and magnetic field induced gap opening driven by Landau quantization became observable by using a 60 T pulsed magnet. The pressure-induced enhancement of the diamagnetic coefficient is consistent with the increase of the dielectric constant under pressure while the evolution of the linear coefficient is consistent with a slight increase of the electron effective mass up to 4 GPa and a direct-to-indirect conduction-band crossover around that pressure.