Heteroepitaxial growth of nickel on diamond
1995
Nickel films have been grown on synthetic type Ib diamonds. The films prepared under ultra high vacuum conditions by electron-beam evaporation were characterized by X-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, scanning electron microscopy, Nomarski microscope and Talystep profilometer. Epitaxial growth was found even at a 25 °C substrate temperature, in contrast to the literature (R.J. Caveney et al., Diamond Research, Industrial Diamond Information Bureau, London, 1971, p. 20) where an epitaxy temperature of 205 °C is reported. Below 300 °C the films grow in a two-dimensional mode.
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