Al2TeO6: Mechanism of phase formation and dielectric properties

Low-loss dielectrics with low sintering temperatures will facilitate microelectronics to reach the high levels of integration that wireless communications currently require. In this work the phase-formation mechanism of 1:1 Al 2 O 3 –TeO 2 is proposed. It is shown that TeO 2 oxidation, which occurs in air at >600 °C to form Te 4 O 9 and TeO 3 , triggers Al 2 TeO 6 formation. The dielectric permittivity of Al 2 TeO 6 was calculated to be ∼22 at 1 MHz. Al 2 TeO 6 is a promising material for ceramic bodies or substrates for dielectric applications,