Species vertical stt-mram write memory cell and method

The present invention provides a kind of vertical STT-MRAM memory unit stacked structure comprising: a magnetic reference layer, the magnetic memory layer, a tunnel barrier layer, a magnetic crystal optimize auxiliary layer facing laminate and a control line; magnetocrystalline optimize the auxiliary layer and the magnetic memory layer disposed adjacent to and remote from the surface of the magnetic layer of the memory substrate body; and facing laminate layer adjacent to the auxiliary magnetic crystal optimization and optimization plane disposed in the magneto-crystalline auxiliary layer remote from the substrate body; set pressure control line and layer disposed adjacent to and on the opposite surface of the substrate remote from the laminate substrate. The present invention also provides the above method of reading and writing the memory cell comprises: a write operation, between the control lines and bit lines plus the forward bias voltage, so that an electric field generated perpendicular anisotropy magnetic layer is reduced memory; read when no pressure between the control lines and bit lines, no electric field, the strong perpendicular anisotropy magnetic memory plane; or when a read operation, the bit line between the control line and a negative bias voltage is applied, so that an electric field generated perpendicular magnetic anisotropy memory enhancement layer.