Defects and Dopants in Silicon Nanowires Produced by Metal‐Assisted Chemical Etching

The current status of the investigation of defects in silicon nanowires and at the interface between Si and its oxide in 1D nanostructures is reviewed and discussed. The paper concentrates on nanowires produced by metal assisted chemical etching. The role of defects at the interface between the semiconductor and its oxide and of hydrogen in passivating donor atoms is addressed. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0171604jss] All rights reserved.