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真空アニール法がAl_2O_3/GaSb MOS界面に与える影響(半導体プロセス・デバイス(表面,界面,信頼性),一般)
真空アニール法がAl_2O_3/GaSb MOS界面に与える影響(半導体プロセス・デバイス(表面,界面,信頼性),一般)
2013
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tatu rou maeda
Keywords:
High-κ dielectric
Condensed matter physics
MOSFET
Chemistry
mos capacitor
Optoelectronics
Materials science
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