Diffraction anomalous fine structure investigation of InGaN quantum dots

Diffraction anomalous-fine structure technique was used for the investigation of the chemical composition of self-assembled non-capped InGaN quantum dots grown on GaN. In a grazing-incidence geometry, a dependence of the energy of the GaK absorption edge on the radial scattering vector was found. This dependence is explained by a chemical shift of the GaK absorption edge due to the In content and due to the local elastic strains in quantum dots. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)