Nonplanar semiconductor device and methods for forming these

Non-planar semiconductor device, comprising: at least one semiconductor nanowire (18 '') which is suspended over a semiconductor oxide layer (26) which is present on a first portion (100) of a bulk semiconductor substrate (12), wherein an end segment of the at least one suspended semiconductor nanowire at a first semiconductor contact zone (20A) is fixed and another end segment of the at least one suspended semiconductor nanowire on a second semiconductor contact region (20B) is fixed, wherein the first and second semiconductor contact zone are arranged over a second portion (102) of the bulk semiconductor substrate and in direct contact associated with this, wherein the second portion of the bulk semiconductor substrate offset vertically and is disposed over the first portion of the bulk semiconductor substrate (12); a gate (27) having a central portion (18C) of the at least one suspended semiconductor nanowire (18 '') surrounds; a source region (40, 50A) disposed on a first side of the gate; and a drain region (40 ', 50B) which is disposed on a second side of the gate, which opposes the first side of the gate opposite.