Pulse shapes of silicon strip detectors as a diagnostic tool

Abstract We report on a systematic study of pulse shapes from silicon strip detectors. Using an infrared laser with a very fast rise and fall time to simulate ionization from charged particles, we were able to map out the response of the detectors as function of operating voltage (overdepletion), material uniformity (local radiation damage) and distance from the readout electronics along the strip. We have simulated the response with electrostatic and circuit simulators. We emphasize the importance of these effects for the design and operation of detectors and readout electronics for high luminosity hadron colliders, such as the LHC and SSC.