HgCdTe negative luminescence devices with high internal and external efficiencies in the midinfrared
2007
The authors report the fabrication and characterization of mid-IR HgCdTe negative luminescence (NL) devices grown on silicon substrates. Sensitive optical modulation measurements of the 5mm square array with ∼5.4μm cutoff and single-layer antireflection (AR) coating yield an internal NL efficiency of 98% at room temperature. This is the highest ever reported, and represents a factor-of-50 suppression of the blackbody emission. The corresponding external NL efficiency of 86% is consistent with the internal efficiency and the spectrally weighted reflectivity of 15%, which could be improved substantially through the incorporation of a state-of-the-art multilayer AR coating.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
7
Citations
NaN
KQI