HgCdTe negative luminescence devices with high internal and external efficiencies in the midinfrared

2007 
The authors report the fabrication and characterization of mid-IR HgCdTe negative luminescence (NL) devices grown on silicon substrates. Sensitive optical modulation measurements of the 5mm square array with ∼5.4μm cutoff and single-layer antireflection (AR) coating yield an internal NL efficiency of 98% at room temperature. This is the highest ever reported, and represents a factor-of-50 suppression of the blackbody emission. The corresponding external NL efficiency of 86% is consistent with the internal efficiency and the spectrally weighted reflectivity of 15%, which could be improved substantially through the incorporation of a state-of-the-art multilayer AR coating.
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