DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

The conduction‐band discontinuity ΔEc and interface charge density σ have been studied for In0.5Ga0.5P/In1−xGaxAs1−yPy (y<0.3) heterojunctions prepared by liquid phase epitaxy. The carrier concentration profiles of both normal (In0.5Ga0.5P on In1−xGaxAs1−yPy) and inverted (In1−xGaxAs1−yPy on In0.5Ga0.5P) structures are obtained by capacitance–voltage measurements, which agree well with the results of the self‐consistent numerical calculations. The current–voltage and deep‐level transient spectroscopy measurements confirm the validity of the result. It is found that ΔEc corresponds to 18% of the band‐gap difference ΔEg, for both normal and inverted structures.