PHOTOEMISSION STUDY OF AMORPHOUS AND CRYSTALLINE GeTe AND (Ge,Mn)Te SEMICONDUCTORS

Abstract Resonant photoemission spectroscopy was applied to compare the valence band structure of Ge 0.9 Mn 0.1 Te and GeTe semiconductor layers deposited on BaF 2 substrate in monocrystalline and amorphous forms. In (Ge,Mn)Te the contribution of Mn 3 d 5 electronic orbitals to density of states was found in three binding energy regions: below the top of the valence band ( E b p – d hybridization effects, important for magnetic and optical properties of (Ge,Mn)Te, are stronger in monocrystalline than in amorphous (Ge,Mn)Te layers.