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Vt キャンセル書込方法を用いた結晶性In-Ga-Zn Oxide FETによる128kb 4bit/cell 不揮発性メモリ
Vt キャンセル書込方法を用いた結晶性In-Ga-Zn Oxide FETによる128kb 4bit/cell 不揮発性メモリ
2015
takanori matuzaki
tatuya oonuki
syuuhei nagatuka
hiroki inoue
takahiko isizu
yosinori ieda
saneyuki sakakura
tomoaki atami
yutaka sionoiri
kiyosi katou
taka okuda
ryou taka yamamoto
masahiro fuzita
jun oyama
syun taira yamazaki
Keywords:
Oxide
Electronic engineering
CMOS
Metallurgy
Materials science
Electrical engineering
Nanotechnology
Correction
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