On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

Resonant tunneling through defect levels in the h-BN barrier of van-der-Waals heterostructures is investigated. The effect of multiplication of the tunneling resonances through these levels due to the effect of a high degree of imperfection of the structure of the neighboring graphene layer formed intentionally by its processing in plasma is found. Various mechanisms of such an effect are discussed.