A double InGaAs/InP HBT technology for lightwave communication circuits design

1996 
A InGaAs/InP double heterojunction bipolar transistor technology has been developed to meet the requirements of circuits for 40 Gb/s optical communication links. In particular a breakdown voltage higher than 10 V, cut-off frequencies higher than 60 GHz over a large emitter-collector voltage range have been achieved.
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