N X: NONVOLATILE MEMORIES

A WORD-WIDE 4Mb (256K x 16) EPROM, developed on CHMOS I11 technology to accommodate future high-density applications that will be dominated by 16b/32b microprocessors and micro- controllers, will be reported. Lithographic advances have driven the scaling of EPROM technology to the lpm level. The improved resolution in com- bination with excellent control has allowed scaling of the self- aligned floating gate EPROM memory cell to 11.9W2 and per- mitted scaling of the EPROM device channel length to below 0.5~. A lightly-doped drain process is implemented in the