Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters

The p-type microcrystalline silicon (?c-Si:H) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the ?c-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum ?c-Si:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08?W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15?nm. We fabricate ?c-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.