A method for manufacturing a semiconductor film

An object of the present invention is to provide a method for manufacturing a semiconductor film capable of improving the carrier density. A semiconductor film is grown on a substrate using a molecular beam epitaxy apparatus while adding two or more same-polarity dopants. In the molecular beam epitaxy apparatus 13, the shutters of the Ga cell, Mg cell, Be cell, and RF-N radical gun are opened, and a GaN film is grown on the substrate 11 as the semiconductor film 15. The GaN film includes p-type dopants Mg and Be. The Be dopant is substituted with Ga among the constituent elements of the semiconductor, and the atomic radius R21 of the Ga element is larger than the atomic radius R17 of the Be dopant 17a and smaller than the atomic radius R19 of the Mg dopant 19a. It is possible to reduce the influence of local distortion. [Selection] Figure 2