The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

A 1.2 kV rated 4H-SiC OCTFET device with octagonal-cell topology is proposed and experimentally demonstrated for the first time. The device was first optimized using TCAD numerical simulations. Devices were then successfully fabricated in a 6-inch foundry. From the measured electrical characteristics, the OCTFET is demonstrated to have $\textsf {1.4}\times $ superior high frequency figures-of-merits (HF-FOM) [ $\textsf {R}_{\textsf {on}}\times \textsf {Q}_{\textsf {gd}}$ ], and $\textsf {2.1}\times $ superior HF-FOM [ $\textsf {R}_{\textsf {on}}\times \textsf {C}_{\textsf {gd}}$ ] compared with the conventional linear-cell MOSFET.