Enhancement of Crystalline Quality of Strained InAs/InP Quantum Well Structures by Rapid Thermal Annealing

The effect of rapid thermal annealing of the optical properties of a strained InAs/InP single quantum well structrure has investigated in this paper.The luminescence intensity of the quantum well at 8K was increased by a factor of 4 and 1.55meV blue shoft of the quantum well photoluminescence peak was observed af-ter annealing at the optimal condition of 700℃ for 5s.Furthermoer,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the erystalline quality of strained quantum well struc-tures after growth and is an important way for enhancement of the performance of the laser device.