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Ge基板中のAs高効率活性化と低抵抗浅接合形成 (シリコン材料・デバイス)
Ge基板中のAs高効率活性化と低抵抗浅接合形成 (シリコン材料・デバイス)
2014
sinya hamada
hideki murakami
kan hirosi ono
Keywords:
Radiochemistry
Ion implantation
Germanium
Materials science
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