Location and Crystallographic Orientation Control of Si Grains through Combined Metal Induced Lateral Crystalization and µ-Czochralski Process

We investigated a new technique of location and orientation control by combining metal-induced lateral crystallization (MILC) as precrystallization for the orientation control with the µ-Czochralski process, in which the location control is realized using a grain filter. The electron back scattering diffraction (EBSD) analysis showed that the surface crystal orientation of the location-controlled Si islands has a strong preference without random grain boundaries inside the islands.