Super Junction MOSFETs above 600V with Parallel Gate Structure Fabricated by Deep Trench Etching and Epitaxial Growth

600 V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth method are experimentally investigated. Planar SJ MOSFETs with both parallel and orthogonal gate structures are fabricated. The SJ MOSFET with parallel gate structure exhibits an improved specific on-resistance of 17 mOmegaldrcm 2 , which is about 30% lower than that of orthogonal gate structures with the same breakdown voltage of 650 V.