A process for producing a silicon substrate with altered surface properties, and such a silicon substrate

The present invention relates to a method for producing a silicon substrate (1), comprising the steps of providing a silicon substrate having a substantially planar silicon surface, preparing a porous silicon surface having a plurality of pores (2), in particular with macropores and / or mesopores, and / or nanopores, applying a to be introduced into the silicon filler material having a diameter which is smaller than a diameter of the pores (2), introducing the filler material (3) into the pores (2), optionally removing of excess filler material (3) from the silicon surface and annealing the filled with the into the pores (2) the filler material (3) silicon substrate (1) provided at a temperature between about 1000 ° C to about 1400 ° C to close the created pores (2) again and the include filling material (3).