Layer-by-layer epitaxial growth of GaN at low temperatures

Abstract GaN films have been grown on (0001) Si SiC substrates from triethylgallium and ammonia sources using a self-terminating atomic layer epitaxy method, as well as a layer-by-layer technique and a novel reactor design employing hot filaments to decompose the ammonia. The material properties and growth process were strongly dependent on the temperature and exposure time. GaN grew in a self-terminatng fashion for temperatures below 120°C but the films were amorphous. Above this temperature, the films were deposited in a layer-by-layer process giving single-crystal material in the 250–350°C range. Characterization of the films was conducted using reflection high energy electron diffraction, single-crystal X-ray diffraction, ellipsometry and high resolution transmission electron microscopy.