Preparation of Lead Magnesium Niobate Titanate Thin Films by Chemical Vapor Deposition

Lead magnesium niobate titanate (PMN-PT) thin films were prepared on Pt-coated magnesium oxide single-crystal substrate (Pt(100)/MgO(100)) and Pt- and Ti-coated oxidized Si wafer (Pt(111)/Ti/SiO 2 /Si(100)) at 680-780°C by metalorganic chemical vapor deposition (MOCVD). The PMN-PT thin films comprising perovskite structure as a main phase were obtained in the composition of Ti/(Mg+Nb+Ti)≥25 mol%. Their room-temperature dielectric constant was 1000-1500 measured at 100 mV and 1 kHz.