Plasma CVD apparatus, and coating method and the method of manufacturing a semiconductor device using the same

Plasma CVD apparatus having an anode and a cathode, said device is for producing a thin film on a substrate by performing a plasma discharge between the anode and the cathode, comprising: - arranged between the anode and the cathode substrate holder (3) marked by - at least one conductive element (11) which is disposed between the substrate holder and either the anode or the cathode; in which - the at least one conductive member so provided between the one electrode and the substrate holder that is covered substantially the entire space between the electrode and the substrate holder; and - the at least one conductive element is electrically connected to the one electrode and the substrate holder.