Old Web
English
Sign In
Acemap
>
Paper
>
Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)
Electronic Properties of Large Area Nitrogen Doped Trilayer Graphene on 4H-SiC (0001)
2014
Mohamed Boutchich
Hakim Arezki
David Alamarguy
Kuan-I Ho
Sediri Haikel
Fethullah Gunes
José Alvarez
Jean-Paul Kleider
Chao-Sung Lai
Abdelkarim Ouerghi
Keywords:
Nitrogen
Graphene
Doping
Materials science
Inorganic chemistry
nitrogen doped
Optoelectronics
electronic properties
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]