Weak localization and microwave-irradiated transport in multilayer epitaxial graphene grown on SiC
2015
We have studied weak localization (WL) and microwave-irradiated transport in multilayer graphene grown on SiC(0001). Different scattering channels are identified by analyzing the WL data. Moreover, we have shown that at a fixed ambient temperature, irradiating graphene with a microwave appears to be equivalent to changing the ambient temperature without microwave. We find that both the zero-field resistance of graphene and the WL correction term can be used as reliable thermometers which agree well with each other.
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