Carrier localization and electronic phase separation in a doped spin-orbit-driven Mott phase in Sr 3 (Ir 1– x Ru x ) 2 O 7

Spin-orbit Mott materials such as Sr3Ir3O7 and Sr2IrO4 exhibit rich correlation-driven physics, which makes them promising candidates for novel electronic states. Here, the authors explore the effect of hole-doping within the spin-orbit Mott phase and show that the carriers localize within a phase-separated ground state.