A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

A physical transient memristor synapse with self-rectifying and analogue switching behaviors based on Mo/MgO/AZO (Al2O3 2 wt %, ZnO 98 wt %)/W is presented. By modulating thickness of MgO layer, the device with 5 nm MgO insulator layer shows stable resistive switching memory with a rectification ratio up to 102, and precise tuning synaptic functions. Meanwhile, the formation of Schottky barrier and oxygen vacancy conductive filament is proposed to further explain self-rectifying and analogue switching behaviors. Additionally, the electrical characteristics of the Mo/MgO/AZO/W devices degraded after being immersed in deionized water (DI) for 3 min, which demonstrated the physically transient features successfully. The physical transient self-rectifying memristors have great potential for applications in secure neuromorphic computing systems, and bio-integrated electronics.