Dopant redistribution during Pd2Si formation using rapid thermal annealing

Rapid thermal annealing has been used to form Pd2Si by reacting thin layers of Pd metal on As‐implanted Si. An enhanced growth rate for the Pd2Si has been measured, which does not obey the diffusion limited growth kinetics as reported for the furnace reacted Pd2Si. The growing Pd2Si results in As redistribution which is sufficient to displace the shallow p‐n junction as the silicide/silicon interface approaches the junction position. The As‐implanted profile changes little in the Pd2Si region, with As accumulating at the leading edge of the silicide/silicon interface.