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Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN Substrates
Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN Substrates
2021
Atsushi Moriwaki
Shinji Hara
Keywords:
Optoelectronics
Intermodulation
sic substrate
Materials science
Power (physics)
algan gan
Distortion
Correction
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