Anti-Stokes Raman scattering in trans polyacetylene

Abstract We report the first measurements of anti-Stokes Raman scattering in trans polyacetylene. The lineshapes are quite consistent with a disorder model in which the variation is attributed, for instance, to a disorder-induced distribution of conjugation lengths. The results suggest that the recently proposed hot luminescence model makes no significant contribution to the variation in the Raman lineshape with incident photon energy.