Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric

Abstract The silicene/La2O3 heterojunctions envision promising applications in novel integrated functional nanodevices. The electronic properties of silicene, La2O3, and silicene/La2O3 heterojunctions are investigated by first-principles calculations. The silicene/La-terminated La2O3 heterojunction presents a 1.753 eV band gap, which is desired for silicene-based semiconductor devices. The effects of biaxial strain and external electric field are studied for the band structure of silicene/La2O3 heterojunction. The band gap values of silicene/La2O3 heterojunction could be effectively modulated. These findings indicate the potential application prospects of silicene-based field effect transistor with La2O3 gate dielectric in nanoscale devices.