Irradiation induced tunnel barrier in side-gated graphene nanoribbon

We investigated a method of forming tunnel barriers in monolayer graphene nanoribbon (GNR) using controlled ion irradiation. By using a helium ion microscope (HIM), we are able to reduce the width of exposure area down to 5nm. Source-drain conductance of side-gated GNR has been measured and the gate capacitances were extracted.