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Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET
Influence of Si-SiO2 Interface Microroughness and Dopant Concentration on Electron Channel Mobility in MOSFET
1993
K. Ohmi
K. Nakamura
T. Futatsuki
K. Makihara
Tadahiro Ohmi
Keywords:
Atomic physics
Dopant
MOSFET
Electron
Communication channel
Materials science
electron channel
Optoelectronics
Correction
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