Built-in passive element substrate, the manufacturing method, and a semiconductor device

Breakdown hardly occurs, provides a readily manufacturable built-in passive element substrate and a manufacturing method thereof at low cost. Forming a connection mounting board 1 pad 2 is formed, with a thin film passive element 4 is formed on the substrate 7, a thin film passive device 4 side terminal electrodes 3 corresponding to the connection pads 2 on the surface of which facing the connection pads 2 is, and the terminal electrode 3 is joined to the connection pads 2, a passive chip thickness of the substrate 7 is 15μm or less, while being filled between the passive element chip and the mounting substrate 1, the outer periphery of the passive element chip the resin 6 formed to the upper surface of the disposed portion in part coincides with the upper surface of the substrate 7, and the LSI connection pad 9 formed corresponding to the semiconductor device or a semiconductor package terminals on the upper surface of the substrate 7, passive element comprises a LSI connection pad 9 and the terminal electrode 3 and the through vias 8 which is formed to electrically connect the corresponding in the chip, the.