Reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and manufacturing method thereof

A reverse conducting (RC)-insulated gate bipolar transistor (IGBT) device and a manufacturing method thereof belong to the technical field of power semi-conductor devices. On the basis of a traditional RC-IGBT device structure, a P-type well region 12 is introduced between an N+ collector short circuit area 11 and an N type electric field preventing layer 8, and the N type electric field preventing layer 8 and the P-type well region 12 are insulated from a metal collector 10 by adopting an isolation medium 13. On the basis of traditional RC-IGBT device characteristics, the device can fully eliminate an intrinsic Snap back phenomenon of a traditional RC-IGBT during connection in the positive direction and has a similar loss characteristic as the traditional RC-IGBT. The RC-IGBT device and the manufacturing method are applicable to the field of semi-conductor power devices from small power to large power and power integrated circuits.