The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range

Abstract The activation energy for Mg acceptor in Al x Ga 1-x N alloys is investigated. The modified effective mass model is used to describe the activation energy for Mg acceptor in Al x Ga 1-x N alloys. It is found that the composition dependence of the activation energy for Mg acceptor in Al x Ga 1-x N is very different from that in In x Ga 1-x N. It is mainly due to three factors. In addition, it is found that the energy difference between the Mg acceptor level in Al x Ga 1-x N and the VBM of GaN is very small in a very large composition range, which is very helpful for us to use the Mg-doped AlGaN/GaN superlattice structures to increase the free-hole concentration.