Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x = 2 and 3) thin film compounds

Abstract We report on the MoS 2 and MoO x (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS 2 and MoO 3 enhances by significant reduction of the MoO 3 content in thicker layers.