Characterization of SiPM for cryogenic applications

Abstract The development of detectors based on liquefied noble gas (LAr, LXe) is mandatory for experiments dedicated to study physics beyond the Standard Model. For this purpose, it is fundamental to detect the Vacuum Ultra Violet (VUV) scintillation light, produced after the passage of ionizing particles inside the detector sensitive volume, to be used for trigger, timing and calorimetric purposes. Besides the traditional cryogenic Photo-Multiplier Tubes (PMTs), one possibility is to adopt Silicon Photo-Multipliers (SiPMs). We present a comparison of the performance of a SiPM (mod. ASD-NUV3S-P Low Afterpulse) at various cryogenic temperatures, from 60 K up to room temperature, with particular emphasis on the LAr and LXe temperatures. SiPM were characterized in terms of breakdown voltage, gain, pulse shape response, dark count rate and correlated noise.