Atomic scale understanding of the defects process in concurrent recrystallization and precipitation of Sm-Co-Fe-Cu-Zr alloys

Abstract Identifying the defects process in concurrent recrystallization and precipitation during aging a supersaturated solid solution is essential for understanding their interaction mechanisms and for manipulating the microstructure, but was rarely done at the atomic scale. Herein, the concurrent recrystallization and precipitation in the supersaturated hexagonal Sm(Co, Fe, Cu, Zr)7.5 alloys were studied through detailed transmission electron microscopy investigations, where the recrystallization, growth of recrystallized subgrains (cells) and precipitates stem from the gradual formation and dissociation of defects, including basal stacking faults (SFs), vacancies and excess interstitial atoms. The diffusion-controlled glides of -type partial dislocations associated with the SFs not only transform the matrix from the mixture of hexagonal Sm(Co, Fe, Cu, Zr)7 (1:7H) and Sm2(Co, Fe, Cu, Zr)17 (2:17H) to Sm-depleted rhombohedral Sm2(Co, Fe, Cu, Zr)17 (2:17R) cells but also provide continuous diffusion channels to reduce the point defects to form the Sm-enriched hexagonal Sm(Co, Fe, Cu, Zr)5 (1:5H) cell boundary precipitates and Zr-enriched rhombohedral (Sm, Zr)(Co, Fe, Cu)3 (1:3R) platelets. It indicates a diffusion-controlled displacive phase transformation mechanism, characterized by the composition-dependent 2:17R’ intermediate phase due to incomplete basal slip and incomplete solute partitioning. The growth velocities of both recrystallized cells and precipitates are closely related to the defects density, being faster due to the high defects density at early stage, and being slower due to the reduced defects density at later stage. A basal slip model is proposed to explain the formation and dissociation of defects along with the stacking period change and the simultaneous formation of continuous atomic diffusion channels. These new findings may yield a deep understanding of the interaction between recrystallization and precipitation.