Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme

Abstract Ohmic contacts have been fabricated on a naturally occurring type IIb diamond crystal using an annealed Ti/Pt/Au trilayer metallization where the Pt served successfully as a barrier to Ti diffusion into the Au capping layer. However, a specific contact resistance could not be reliably determined using transmission line model measurements. Auger microanalysis revealed the presence of Ti on the diamond surface near the ohmic contact pads. The most likely origin of the Ti on the diamond surface was determined to be lateral diffusion from beneath the contact pads. This would have produced a nonuniform concentration of Ti across the diamond surface which, in turn, would have affected the diamond sheet resistance in a complicated way.