Effects of temperature on structural and optical properties of ZnMgO films fabricated by pulsed laser deposition

ZnMgO thin films have been deposited on Si(111) substrates by pulsed laser deposition (PLD) technique at growth temperature from 300 to 700°C in nitrogen ambient of 1.0 Pa. The effects of growth temperature on structural and optical properties of deposited ZnMgO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared absorption (IR) spectra and photoluminescence (PL) spectra. The results of XRD and SEM analyses show that the film fabricated at 400°C possesses good crystallinity with hexagonal wurtzite structure and surface morphology. The Mg has been incorporated into ZnO in the form of substitutional Zn. The IR spectra reveal the typical absorption peaks of ZnMgO. The band-gap values have been obtained from 2.96 to 4.23 eV with increasing growth temperature. The PL spectra show that the highest UV emission is obtained at growth temperature of 600°C, and the obvious blue-shift is observed. This may be assigned as the change of the band-gap due to the increasing incorporation of Mg2+ ions with the increasing growth temperature.