GIDL effect observed in FinFET shapes and V t implant energy

The leakage of FinFETs with the different features and V t implant energy is observed and strongly related to the previous factors. Due to the process controllability, especially in photo-lithography, the multi-channel shape to promote the drive current seems not easy to be controlled well and deteriorates the desired target. The GIDL effect coming from the lower V t implant energy is more distinct than at the higher with the multi-channel FinFETs. However, this phenomenon was not apparently observed in the single FinFET.