Cleaning liquid, method for cleaning substrate, and method for manufacturing semiconductor device

The present invention addresses the problem of providing: a cleaning liquid used on a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid having excellent prevention of corrosion of a cleaning object while also having excellent residue removal performance; a method for cleaning a substrate using the cleaning liquid; and a method for manufacturing a semiconductor device. This cleaning liquid is a cleaning liquid for a substrate provided with a metal hard mask including any one or more of Cu, Co, W, AlOx, AlN, AlOxNy, WOx, Ti, TiN, ZrOx, HfOx, and TaOx, the cleaning liquid including water and at least one species selected from a hydroxylamine and a hydroxylamine salt. In the formulas, x and y are numbers represented by x = 1-3 and y = 1-2, respectively.