On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)

The voltage transfer characteristics (VTC) of a complementary metal-oxide-semiconductor (CMOS) inverter provides necessary information about some of the most important performance parameters, such as noise margin (low/high), inverter logic threshold voltage, and so on. Over years, there has been an increasing trend to use various commercially available Technology Computer Aided Design (TCAD) tools and circuit simulators to study such performance parameters. The emergence of novel devices has forced the theoretical research community to refine TCAD tools and simulators. We have developed a simulator that can plot the VTC curve of strained/unstrained nanoscale MOSFET based CMOS circuits. Our algorithm can faithfully reproduce the VTC curve of nanoscale MOSFET based CMOS inverter with an average deviation of less than 2 %. We have also shown the dependence of VTC curves of nanoscale strained Si/SiGe and multi channel (MC) gate-all-around (GAA) MOSFET based CMOS inverters on some important device parameters.