Zero-mismatch temperature synthesis of NiSi2 by a metal vapor vacuum arc ion source

Abstract NiSi 2 surface layers were synthesized by implantation of Ni into Si (1 1 1) substrates at the zero-mismatch temperature with a metal vapor vacuum arc source. X-ray diffraction patterns showed that these layers had a strong (1 1 1) preferred orientation. Rutherford back scattering/channeling spectrometry was performed to evaluate the quality of the NiSi 2 layers. The concept of “ion existential model” has been employed to explain the ratio of the amount of Ni and that of Si. Four-point probe measurement showed that a higher implantation dose is better to synthesize a high quality NiSi 2 layer.