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(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI
(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI
2016
E. Augendre
Nicolas Loubet
Pierre Morin
Qing Liu
Joël Schmitt
B. Lherron
P. Nguyen
Sylvain Barraud
L. Hutin
Sylvain Maitrejean
Barbara De Salvo
R. Coquand
Shay Reboh
Rajasekhar Venigalla
Bruce B. Doris
Tenko Yamashita
Olivier Faynot
Maud Vinet
Keywords:
Silicon on insulator
Germanium
Nanowire
Fin
Planar
Electrical engineering
Electronic engineering
Communication channel
Geography
Optoelectronics
Materials science
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